*High power gain:
Pout>8W, Gp>10dB@Vdd=7.2V,f=520MHz
(4.5)
0.95+/-0.2
2.6+/-0.2
*High Efficiency: 50%min. (520MHz)
*Integrated gate protection diode
INDE.
(3.6)
(d)
FEATURES
*High power gain:
Pout>8W, Gp>10dB@Vdd=7.2V,f=520MHz
(4.5)
0.95+/-0.2
2.6+/-0.2
*High .
RD09MUP2 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications.
(3.6)
(d)
FEATURES
*High power gain:
Pout>8W, Gp>10dB@Vdd=7.2V,f=520MHz
(4.5)
0.95+/-0.2
2.6+/-0.2
*High Efficiency: 50%min. (520MHz) .
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